| PART |
Description |
Maker |
| NTE105 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| NTE160 |
Germanium PNP Transistor RF-IF Amp, FM Mixer OSC
|
NTE[NTE Electronics]
|
| 2N398 |
PNP germanium transistor for high-voltage, audio-frequency applications
|
New Jersey Semi-Conductor Products, Inc.
|
| AF239S Q62701-F51 SIEMENSAG-Q62701-F51 |
LJT 41C 41#16 SKT WALL RECP
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| Q6016-X139 AF139 |
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3
TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五（巴西）总裁| 7A条一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五（巴西）总裁| 100mA的一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五（巴西）总裁|5A一（c）|6
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V.
Microsemi, Corp.
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| 2N1038 2N1039 2N1040 2N1041 2N2554 2N2556 2N2552 2 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
